Small Mosfet

Small Signal Transistors & Diodes. Wide Bandgap Semiconductors (SiC/GaN). Orderable Part Number Information. Now, contrast the MOSFET with its small-signal circuit model. A MOSFET small-signal circuit model is: i D i D i G =0 + v GS - + v DS - G S D.

Small Signal Analysis Of Mosfet
Small Signal E.mosfet
Small Signal Model Mosfet

2N7000 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 2N7000

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 1 W

Предельно допустимое напряжение сток-исток |Uds|: 60 V

Предельно допустимое напряжение затвор-исток |Ugs|: 18 V

Пороговое напряжение включения |Ugs(th)|: 3 V

Максимально допустимый постоянный ток стока |Id|: 0.35 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 1.4 nC

Время нарастания (tr): 15 ns

Выходная емкость (Cd): 20 pf

Сопротивление сток-исток открытого транзистора (Rds): 5 Ohm

Тип корпуса: TO92

2N7000 Datasheet (PDF)

0.1. 2n7000p.pdf Size:184K _1

0.2. 2n7000r3.pdf Size:77K _motorola

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N7000/DTMOS FET Transistor2N7000N Channel EnhancementMotorola Preferred Device3 DRAIN2GATE1 SOURCEMAXIMUM RATINGS

0.3. 2n7000-03.pdf Size:274K _philips

2N7000N-channel enhancement mode field-effect transistorRev. 03 19 May 2000 Product specification1. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:2N7000 in SOT54 (TO-92 variant).2. Features TrenchMOS technology Very fast switching Logic level compatible.3. Applications Relay

0.4. 2n7000 2n7002.pdf Size:626K _st

2N70002N7002N-channel 60 V, 1.8 , 0.35 A, SOT23-3L, TO-92STripFET Power MOSFETFeaturesType VDSS RDS(on) max ID32N7000 60 V

0.5. 2n7000bu.pdf Size:85K _fairchild_semi

Advanced Small Signal MOSFET 2N7000BU/2N7000TAFEATURESBVDSS = 60 Vn Fast Switching TimesRDS(on) = 5.0 n Improved Inductive Ruggednessn Lower Input CapacitanceID = 200 mAn Extended Safe Operating Arean Improved High Temperature ReliabilityTO-921.Source 2. Gate 3. DrainAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V60Contin

0.6. 2n7000 2n7002 nds7002a.pdf Size:109K _fairchild_semi

November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description FeaturesHigh density cell design for low RDS(ON).These N-Channel enhancement mode field effect transistorsare produced using Fairchild's proprietary, high cell density,Voltage controlled small signal switch.DMOS technology. These products have been designed toRugged

0.7. 2n7000ta.pdf Size:84K _fairchild_semi

0.8. 2n7000.pdf Size:94K _fairchild_semi

0.9. 2n7000.pdf Size:443K _samsung

N-CHANNEL SmaII SignaI MOSFETFEATURESBVDSS = 60 V Fast Switching TimesRDS(on) = 5.0 Improved Inductive Ruggedness Lower Input CapacitanceID = 200 mA Extended Safe Operating Area Improved High Temperature ReliabilityTO-921231.Source 2. Gate 3. DrainAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V60Continuous Drain Cur

0.10. 2n7000kl bs170kl.pdf Size:93K _vishay

2N7000KL/BS170KLVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) () VGS(th) (V) ID (A)Pb-free ESD Protected: 2000 VAvailable2 at VGS = 10 V0.4760 1.0 to 2.5 RoHS*APPLICATIONSCOMPLIANT4 at VGS = 4.5 V0.33 Direct Logic-Level Interface: TTL/CMOS Solid-State Relays Drivers: Relays,

0.11. 2n7000 2n7002 vq1000j-p bs170.pdf Size:58K _vishay

2N7000/2N7002, VQ1000J/P, BS170Vishay SiliconixN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)5 @ VGS = 10 V 0.8 to 3 0.22N70002N7002 7.5 @ VGS = 10 V 1 to 2.5 0.11560VQ1000J 5.5 @ VGS = 10 V 0.8 to 2.5 0.225VQ1000P 5.5 @ VGS = 10 V 0.8 to 2.5 0.225BS170 5 @ VGS = 10 V 0.8 to 3 0.5FEATURES BENEFITS APPLICATIONSD

0.12. 2n7000g 2n7000rlra 2n7000rlrag 2n7000rlrmg 2n7000rlrpg.pdf Size:88K _onsemi

2N7000GSmall Signal MOSFET200 mAmps, 60 VoltsN-Channel TO-92Featureshttp://onsemi.com AEC Qualified200 mAMPS PPAP Capable60 VOLTS This is a Pb-Free Device*RDS(on) = 5 WN-ChannelMAXIMUM RATINGS DRating Symbol Value UnitDrain Source Voltage VDSS 60 VdcDrain-Gate Voltage (RGS = 1.0 MW) VDGR 60 VdcGGate-Source Voltage- Continuous VGS 20 VdcS- No

0.13. 2n7000g.pdf Size:92K _onsemi

0.14. 2n7000z.pdf Size:150K _utc

UNISONIC TECHNOLOGIES CO., LTD 2N7000Z Power MOSFET 115m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION 1 The UTC 2N7000Z has been designed to minimize on-state resistance to provide rugged, reliable, and fast switching TO-92performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. The product is p

0.15. 2n7000.pdf Size:355K _utc

UNISONIC TECHNOLOGIES CO., LTD 2N7000 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC 2N7000 has been designed to minimize on-state 1resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. The product isTO-92particularly suited for low vo

0.16. 2n7000k.pdf Size:201K _auk

2N7000KN-Channel Enhancement Mode MOSFETHigh Speed Switching Application Features ESD rating: 1000V (HBM) Low On-Resistance: RDS(on)

0.17. 2n7000csm.pdf Size:28K _semelab

2N7000CSMMECHANICAL DATADimensions in mm (inches)NCHANNELENHANCEMENT MODEMOS TRANSISTOR0.51 0.10(0.02 0.004) 0.31rad.(0.012)3FEATURES V(BR)DSS = 60V21 RDS(ON) = 51.91 0.10(0.075 0.004)A0.31rad.(0.012)3.05 0.13 ID = 200mA(0.12 0.005)1.40(0.055)1.02 0.10 Hermetic Ceramic Surface Mount max.A =(0.04

0.18. 2n7000.pdf Size:358K _secos

2N7000200mA,60V,RDS(ON) 6Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductTO-92 DDescriptionES1The 2N7000 is designed for high voltage, highspeed applications such as switching regulators,converters, solenoid and relay drives. b1SEATING PLANECe1beDrainMillimeter MillimeterREF. REF. Min. Max. Min. Max. Gat

0.19. tsm2n7000kct.pdf Size:181K _taiwansemi

TSM2N7000K 60V N-Channel MOSFET TO-92 Pin Definition: PRODUCT SUMMARY 1. Source VDS (V) RDS(on)() ID (mA) 2. Gate 3. Drain 5 @ VGS = 10V 100 60 5.5 @ VGS = 5V 100 Features Block Diagram Low On-Resistance ESD Protection High Speed Switching Low Voltage Drive Ordering Information Part No. Package Packing TSM2N7000KCT B0 TO-92 1Kpcs / Bulk

0.20. tsm2n7000.pdf Size:85K _taiwansemi

0.21. 2n7000.pdf Size:531K _jiangsu

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate MOSFETS TO-92 2N7000 MOSFET (N-Channel) 1. SOURCE FEATURES High density cell design for low RDS(ON) 2. GATE Voltage controlled small signal switch 3. DRAIN Rugged and reliable High saturation current capability MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value

0.22. 2n7000k.pdf Size:67K _kec

2N7000KSEMICONDUCTORN Channel MOSFETTECHNICAL DATAESD Protected 2000VINTERFACE AND SWITCHING APPLICATION. B CFEATURESESD Protected 2000V.High density cell design for low RDS(ON).Voltage controlled small signal switch.N DIM MILLIMETERSRugged and reliable.A 4.70 MAXEKB 4.80 MAXHigh saturation current capablity. GC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85H

0.23. 2n7000a.pdf Size:61K _kec

2N7000ASEMICONDUCTORN CHANNEL ENHANCEMENT MODETECHNICAL DATAFIELD EFFECT TRANSISTORINTERFACE AND SWITCHING APPLICATION. B CFEATURESHigh density cell design for low RDS(ON).Voltage controolled small signal switch.Rugged and reliable.N DIM MILLIMETERSHigh saturation current capablity.A 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85

0.24. 2n7000.pdf Size:63K _kec

2N7000SEMICONDUCTORN CHANNEL ENHANCEMENT MODETECHNICAL DATAFIELD EFFECT TRANSISTORINTERFACE AND SWITCHING APPLICATION. B CFEATURESHigh density cell design for low RDS(ON).Voltage controlled small signal switch.Rugged and reliable.N DIM MILLIMETERSHigh saturation current capablity.A 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85MAXIMUM RA

0.25. 2n7000.pdf Size:239K _lge

2N7000 Mosfet (N-Channel)TO-921. SOURCE 2. GATE 3. DRAIN Features High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVDS Drain-Source voltage 60 V Dimensions in inches and (millimeters)ID Drain Curr

0.26. 2n7000.pdf Size:168K _wietron

WEITRON2N7000Small Signal MOSFETN-Channel3 DRAINTO-92Features:21*Low On-Resistance : 5 GATE 1. SOURCE 23*Low Input Capacitance: 60PF 2. GATE3. DRAIN*Low Out put Capacitance : 25PF1SOURCE*Low Threshole :1.4V(TYE)*Fast Switching Speed : 10nsMaximum Ratings (TA=25 C Unless Otherwise Specified)Rating Symbol Value UnitDrain-Source Voltage VDS 60 VGate-S

0.27. h2n7000.pdf Size:51K _hsmc

Spec. No. : HE6267HI-SINCERITYIssued Date : 1993.09.17Revised Date : 2006.08.10MICROELECTRONICS CORP.Page No. : 1/5H2N7000N-Channel Enhancement Mode TransistorDescriptionThe H2N7000 is designed for high voltage, high speed applications such as switchingregulators, converters, solenoid and relay drivers.TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temp

0.28. st2n7000.pdf Size:566K _semtech

ST 2N7000 Small Signal MOSFET 200 mA, 60 V N-Channel DrainGateSource1. Source 2.Gate 3.DrainTO-92 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitDrain Source Voltage VDSS 60 VDrain-Gate Voltage (RGS = 1 M) VDGR 60 VGate-source Voltage Continuous VGS 20 V VGSM 40 V Non-repetitive ( tp 50 s)Drain Current Continuous

0.29. h2n7000.pdf Size:423K _shantou-huashan

H2N7000 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel Enhancement Mode Field Effect Transistor General Description These products have been designed to minimize on-state resistance While TO-92 provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, pow

0.30. 2n7000.pdf Size:199K _inchange_semiconductor

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor 2N7000FEATURESWith TO-92 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLoad switchPower managementABSOLUTE MAXIMUM RATINGS(T =25)a

Другие MOSFET... 2N6967JANTX, 2N6967JANTXV, 2N6968, 2N6968JANTX, 2N6968JANTXV, 2N6969, 2N6969JANTX, 2N6969JANTXV, IRF630, 2N7000P, 2N7001, 2N7002, 2N7002L, 2N7004, 2N7005, 2N7006, 2N7007.

Список транзисторов

Обновления

As we discussed before, the output voltage for the MOSFET amplifier is non-linear towards the input voltage: $v_{o u t}$ = $V_{S} - \frac{K (v_{D S} - V_{T h})^{2}}{2} R_{L}$ .

Small Signal Analysis Of Mosfet

Figure 1 shows the MOSFET amplifier at the small-signal interpretation.

Figure 1.The MOSFET amplifier and it’s small-signal model.

This non-linearity significantly complicates design development, so linearity of the amplifier is more interesting from the designer point of view. Small-signal approximation states that at small time-varying incremental amplification, the time-changing component will be linear. Figure 2 depicts the transfer characteristics with small-signal interpretation. In this situation the incremental transconductance is $g = K (v_{G S} - V_{T h})$ , where g is the ratio between input voltage and current. Small-signal gain is $- g R_{L}$ .

Figure 2. The transfer function for the MOSFET amplifier.

In order to calculate the incremental small-signal response, we have to do a few calculations: we need to find the large-signal response for the certain DC operating point of the signal. And then we must use the Taylor approximation to obtain the small-signal response for this operating point.

Considering the circuit in terms of small-signal approximation we must:
1. Put all components to their operating value.
2. Linearise the behaviour of every circuit component at the operating point.
3. Replace orginal circuit components with their linearised components.

Some handbooks give the extensive explanation of the small-signal approximation of different components of circuits like DC voltage and current sources. In general, we need to find the small-signal approximation of the circuit component $f (x)$ so it’small signal deviation for this component is $y = \frac{d f (x)}{d x}$ at some specific value for the operation point $x_{0}$ .

For the MOSFET amplifier, small-signal approximation for the operating current is $I_{o} = \frac{K}{2} (V_{i n p u t} - V_{T h})^{2}$ , and $V_{o} = V_{S} - \frac{K}{2} (V_{i n p u t} - V_{T h})^{2} R_{L}$ . Figure 3 depicts the amplifier and its small-signal model.

Figure 3. The difference amplifier and its small signal model.

The input resistance for this model will be $r_{i} = \infty$ , the output resistance is $r_{O} = R_{L}$ . The current gain for this model will be $\frac{v_{O}}{v_{t e s t}} \frac{R_{i}}{R_{o}}$ . Power gain for this scheme will be $\frac{v_{o}}{v_{t e s t}} \frac{i_{o}}{i_{t e s t}}$ .

Let’s consider the difference amplifier AD8479 for high quality amplification. This difference amplifier consists of the operational amplifier and resistor network. The output of the difference amplifier $v_{o} = A_{D} (v_{A} - v_{B}) + A_{C} \frac{v_{A} + v_{B}}{2}$ , where $A_{D}$ is the difference-mode gain, and $A_{C}$ is the common-mode gain. These can lead us to the common mode rejection ratio for the amplifier $C M R R = \frac{A_{D}}{A_{C}}$ .[1]

Figure 4. Functional diagram for the difference amplifier AD8479, Analog Devices. [2]

Small Signal E.mosfet

[1] “Foundations of Analog and Digital Electronic Circuits”, Anant Agarwal and J. H. Lang, Elsevier.

Small Signal Model Mosfet

[2] AD8479 datasheet, Analog Devices.

Shazam On Instagram

Checkpoint Switch